???? ST333R4F1 L compact package with double-end leads visible ray cutting resin molding ? ?????C?^ photointerrupter, transmission sensor item symbol conditions min. typ. max. unit. ta25 ?? maximum ratings item symbol rating unit ? ? ? topr. tstg. tsol. 2585 3085 260 ta25 v ceo 30 v c-e voltage operating temp. storage temp. soldering temp. phototransistors ??????` ????`?? 0.6 apr.2009 ST333R4F1???????`?????`???????????` g?m?? the ST333R4F1 is a duble-end type silicom phototransistor mount ed in a compact package with visible ray cut. the compact size and easy to mount on small space ????? features applications electro-opticalcharacteristics Y??d????gMi?????????H??? ?_J? t he contents of this data sheet are subject to change without ad vance notice for the purpose of improvement. when using this p roduct, would you please refer to the latest specifications. 1. `??2mmx??=5 s for max. 5 seconds at the position of 2mm from the resin edge 1 ? ?`?L ? dark current light current spectral sensitivity peak wavelength half angle i ceo i l p ? *2 v ceo 10v v ce 5v, ev1000 lx 2.0 8701100 960 20 0.1 a ma nm nm deg 2. ???2856k????? color temp. = 2856k standard tungsten lamp cut-0ff 10% v eco 5 mw e-c voltage i c 20 ma collector current p c 75 mw collector power dissipation ? ? ??g?R ? ? ??g?R ? ?p? ? ? ??g??R c-e saturation voltage v ce(sat) i c 0.1ma, ev2000 lx 0.4 v 0.2 *2
ST333R4F1 apr.2009 Y??d????gMi?????????H??? ?_J? t he contents of this data sheet are subject to change without ad vance notice for the purpose of improvement. when using this p roduct, would you please refer to the latest specifications. phototransistors ????? 24 0 1 2 3 4 5 ma 6 8 10v na 500 400 600 0 20 40 60 80 100 % 700 800 900 1000 nm 10 2 10 1 0 10 0 10 1 10 1 10 2 ma 10 3 10 4 lx 40 20 0 50 75 25 100 mw 80 100 60 20 40 60 80 100 0 10 0 10 1 10 1 10 2 10 3 ?/ ? ? ?g?R?i c /v ce ?/??i c /e v ? /???i ceo /ta S??p?/???p c /ta 0 0 20 40 60 80 100 20 40 60 80 100 ? 50 100 50 100 50 ta = 25 ?i c collector current ? ? ?g?Rv ce collector - emitter voltage ?s relative sensitivity L wavelength ?i c collector current ??ev illuminance S??p?p c collector power dissipation ???ta ambient temperature i ceo dark current ???ta ambient temperature % relative sensitivity ? ? angle v ce = 5v ta = 25 ta = 25 e v = 2,000lx e v = 1,500lx e v = 1,000lx e v = 500lx v ce = 10v ta = 25 1rgy input i fp v cc v out r l i c output tr tf 10% 90%
ST333R4F1 apr.2009 Y??d????gMi?????????H??? ?_J? t he contents of this data sheet are subject to change without ad vance notice for the purpose of improvement. when using this p roduct, would you please refer to the latest specifications. ? dimensionsunit : mm ?/a reference |?I/tokyo sales ?I/kyoto sales /overseas tel 03-5496-4711 fax 03-5496-4710 tel 0774-20-3559 fax 0774-24-1031 tel +81-(0)774-24-1138 fax +81-(0)774-24-1031 url http://www.kodenshi.co.jp phototransistors ????? 0.3 3.0 2.3 0.9 (0.3) sr0.9 2.6 1.8 (8?) (8?) (8?) (8?) (10?) (10?) (10?) (10?) (4-r0.1) 2-r1.0 (2-r0.2) 1. 2. 0.4 0.6 0.5 5.0 13.5 1 0.2 max20? max20? max20? max20? max15? max15? 15.5 1 collector emitter
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